4.5v drive nch mosfet RMW150N03 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) high power package(psop8). 2) high-speed switching,low on-resistance. 3) low voltage drive(4.5v drive). ? application switching ? packaging specifications ? inner circuit package taping code tb basic ordering unit (pieces) 2500 RMW150N03 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 30 v gate-source voltage v gss ? 20 v continuous i d ? 15 a pulsed i dp ? 60 a continuous i s 2.5 a pulsed i sp 60 a power dissipation p d 3.0 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on 40mm 40mm cu board ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 41.7 ? c / w *2 mounted on 40mm 40mm cu board parameter type source current (body diode) drain current parameter *2 *1 *1 * psop8 5.0 6.0 0.5 0.5 5.0 0.4 1pin mark (1) (2) (3) (4) (8) (7) (6) (5) 0.22 0.9 0 ~ 0.1 1.27 (1) source (2) source (3) source (4) gate (5) drain (6) drain (7) drain (8) drain ? 1 esd protection diode ? 2 body diode ?2 ?1 (8) (7) (6) (5) (1) (2) (3) (4) 1/6 2011.03 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RMW150N03 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss 30 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =30v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1ma - 6.5 9.1 i d =15a, v gs =10v - 9.0 12.6 i d =15a, v gs =4.5v forward transfer admittance l y fs l10 - - si d =15a, v ds =10v input capacitance c iss - 831 - pf v ds =15v output capacitance c oss - 337 - pf v gs =0v reverse transfer capacitance c rss - 95 - pf f=1mhz turn-on delay time t d(on) - 12 - ns i d =7.5a, v dd 15v rise time t r - 38 - ns v gs =10v turn-off delay time t d(off) - 34 - ns r l =2.0? fall time t f -9-nsr g =10 ? total gate charge q g - 15 - nc i d =15a, v dd 15v gate-source charge q gs - 2.6 - nc v gs =10v gate-drain charge q gd - 3.0 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =2.5a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * * * * * * * * * 2/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RMW150N03 ? electrical characteristic curves (ta=25 ? c) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 0.2 0.4 0.6 0.8 1 v gs = 2.5v v gs = 3.0v v gs = 10v v gs = 4.5v v gs = 3.5v ta=25 c pulsed fig.1 typical output characteristics( ) drain - source voltage : v ds [v] drain current : i d [a] 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 2 4 6 8 10 v gs = 2.5v v gs = 10.0v v gs = 4.5v v gs = 3.5v v gs = 3.0v ta=25 c pulsed fig.2 typical output characteristics( ) drain - source voltage : v ds [v] drain current : i d [a] fig.3 typical transfer characteristics drain current : i d [a] gate - source voltage : v gs [v] 1 10 100 0.01 0.1 1 10 100 . v gs = 4.5v v gs = 10v ta=25 c pulsed fig.4 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 1 10 100 0.01 0.1 1 10 100 v gs = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.5 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 1 10 100 0.01 0.1 1 10 100 v gs = 4.5v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.6 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 0.001 0.01 0.1 1 10 100 0 1 2 3 4 v ds = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c 3/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RMW150N03 0.1 1 10 100 0.01 0.1 1 10 100 v ds = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.7 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : i d [a] 0.01 0.1 1 10 100 0 0.5 1 1.5 v gs =0v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.8 reverse drain current vs. sourse - drain voltage source current : i s [a] source - drain voltage : v sd [v] 0 5 10 15 20 0 5 10 15 i d = 15.0a i d = 7.5a ta=25 c pulsed fig.9 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds ( on )[m ? ] gate - source voltage : v gs [v] 1 10 100 1000 10000 0.01 0.1 1 10 100 t f t d(on) t d(off) ta=25 c v dd =15v v gs =10v r g =10 pulsed t r fig.10 switching characteristics switching time : t [ns] drain - current : i d [a] 0 2 4 6 8 10 0 5 10 15 20 ta=25 c v dd =15v i d =15a r g =10 pulsed fig.11 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : qg [nc] 10 100 1000 10000 0.01 0.1 1 10 100 c iss c oss c rss ta=25 c f=1mhz v gs =0v fig.12 typical capacitance vs. drain - source voltage drain - source voltage : v ds [v] capacitance : c [pf] 4/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RMW150N03 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100 p w = 1ms dc operation operation in this area is limited by r ds(on) (v gs =10v) p w =100us p w =10ms ta = 25 c single pulse mounted on a copper board fig.13 maximum safe operating aera drain - source voltage : v ds [v] drain current : i d (a) 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 ta = 25 c single pulse : 1unit rth(ch - a)(t) = r(t) rth(ch - a) rth(ch - a) = 41.7 c /w fig.14 normalized transient thermal resistance vs. pulse width pulse width : pw(s) normarized transient thermal resistance : r (t) 5/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RMW150N03 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 6/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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